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Product Type
5
Ram (Random Access Memory)
117
Memory
4
Hardware wallet
1
Digital Versatile Disc (DVD)
1
Compact disc (CD)
1
Industries
1
Electronics
124
Memories
124
Nanomaterials
1
Carbon nanotube ( Carbon Na...
1
Morphology
1
Carbon Nanotube
1
Countries
5
South Korea
110
USA
7
China
4
Iran
2
France
1
Properties
94
Bank & Interface: 16B/POD
56
Voltage: 1.2V
56
Production Status: Mass Pro...
56
Power: C
55
Speed: PB
34
Density: 8Gb
28
Density: 4Gb
24
Package: 78FBGA
16
Speed: PB
15
Organization: 1Gx72
12
Density: 16Gb
12
Package: 96FBGA
12
Speed: RC
10
Organization: 2Gx72
8
Density: 2Gb
8
Vdd & Vddq: 1.8V / 1.1V
8
Speed: K0
8
Density: 32Gb
7
Organization: x64
6
Organization: 256Mx16
6
Organization: 1Gx4
5
Organization: 512Mx8
5
Organization: 4Gx72
5
Organization: 512Mx64
5
Speed: 3733Mbps
5
Unlimited write endurance
5
Organization: 1Gx64
4
Package: 366FBGA
4
Package: 170FBGA
4
Data retention greater than...
4
Fast 35 ns read
4
Organization: 1Gx8
3
Organization: 4Gx72
3
Speed: 3200Mbps
3
Density: 24Gb
3
Organization: 128Mx16
3
Speed: H9
3
Low current sleep mode
3
Native non-volatility
3
Organization: 2Gx4
2
Organization: 8Gx72
2
Density: 64Gb
2
Density: 128Gb
2
Organization: 16Gx72
2
Organization: 2Gx64
2
Density: 48Gb
2
Organization: x32
2
Package: 200FBGA
2
Speed: 28
2
Vdd/Vddq(V): 1.455 to 1.545
2
Organization: 128Mx32
2
Organization: 256Mx8
2
Organization: 512Mx16
2
Block write protection
2
Light reflection improvement
2
Readability improvement
2
Power: C
1
Speed: RB
1
Speed: RB
1
Speed: RB
1
Organization: 256x64
1
Organization: 512Mx72
1
Organization: 256Mx64
1
Package 272FBGA
1
Package: 272FBGA
1
Organization: 64Mx32
1
Organization: 256Mx32
1
Vdd/Vddq(V): 1.305 to 1.597
1
Speed: 25
1
Vdd/Vddq(V): 1.309 to 1.59
1
Speed: 22
1
Speed: 1A
1
Speed: 1B
1
Speed: 1B
1
512Mx16
1
Organization: 128Mx8
1
Organization: 64Mx16
1
Density: 1Gb
1
Speed: H9
1
Speed: K0
1
Moisture Sensitivity MSL-3
1
SRAM compatible timing
1
SDRAM compatible
1
Low Volatile Organic Compou...
1
Thermal stability
1
Electrical Conductivity
1
Security
1
High Loading Capacity
1
Capacity: 8.5 GB
1
Burn capability improvement
1
Capacity: 700 MB
1
Storage capacity: 256 GB
1
45% smaller than a micro-SD
1
Transfer speeds: 90MB/s
1
Applications
16
High performance computing ...
31
Gaming Console
19
Smart TV
18
Set Top Box
18
Digital Still/Video Cameras
18
Home/personal computing
14
Notebook and portable compu...
12
Smartphone
8
Network servers
5
Data Storage
5
Graphic card
4
Deployment in server-class ...
3
Notebook computers and port...
3
Desktop and notebook computers
1
ULT
1
Console
1
Manufacturers
8
Samsung Electronics Co., Ltd.
110
Everspin Technologies Inc.
6
Montage Technology
2
Reez Mouj System
2
Nantero, Inc.
1
Suzhou Fashion Nano-Technology
1
Ledger SAS
1
Huawei Technologies Co., Ltd.
1
Certificate
1
NanoScale
2
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List of Products
124 Result
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Speed: PB,Organization: 4Gx72,Density: 32Gb
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Speed: RB, TC,Organization: 16Gx72,Density: 128Gb
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Density: 64Gb,Organization: 8Gx72
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Speed: RB
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Speed: PB,Organization: 4Gx72,Density: 32Gb
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Density: 16Gb,Organization: 2Gx72
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Speed: RC,Density: 16Gb,Organization: 2Gx72
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Speed: PB,Density: 16Gb,Organization: 2Gx72
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Organization: 4Gx72,Density: 16Gb
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Speed: RC,Density: 16Gb,Organization: 2Gx72
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Speed: PB,Density: 16Gb,Organization: 2Gx72
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Density: 8Gb,Organization: 1Gx72
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Density: 8Gb,Organization: 4Gx72
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Density: 8Gb,Organization: 1Gx72,Speed: RC
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Density: 8Gb,Organization: 1Gx72,Speed: PB
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Density: 8Gb,Organization: 4Gx72
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Power: C,Bank & Interface: 16B/POD,Density: 8Gb,Organization: 1Gx72,Speed: RC
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Speed: PB, RC,Bank & Interface: 16B/POD,Package: 78FBGA,Density: 8Gb,Power: C, I,Organization: 1Gx8
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Package: 78FBGA,Density: 8Gb,Organization: 2Gx4
Application :
Notebook and portable computers.
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Density: 4Gb,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Package: 78FBGA,Organization: 512Mx8
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Density: 4Gb,Organization: 1Gx4,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Package: 78FBGA
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Density: 4Gb,Organization: 1Gx4,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Package: 78FBGA
Application :
High performance computing and networking
ELECTRONICS - MEMORIES
| RAM (RANDOM ACCESS MEMORY)
Server DRAM
South Korea
Samsung Electronics Co., Ltd.
Properties :
Production Status: Mass Production,Density: 4Gb,Organization: 1Gx4,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Package: 78FBGA
Application :
High performance computing and networking
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