About Company
Paragraf has perfected a proprietary process for depositing single-atom thick, two-dimensional materials, including graphene, directly onto silicon, silicon-carbide, sapphire, gallium-nitride and other semiconductor-compatible substrates. The contamination-free technology is scalable, and compatible with existing electronic device manufacturing processes.
Serving the sensor, energy harvesting and semiconductor markets, Paragraf has developed its own
Paragraf has perfected a proprietary process for depositing single-atom thick, two-dimensional materials, including graphene, directly onto silicon, silicon-carbide, sapphire, gallium-nitride and other semiconductor-compatible substrates. The contamination-free technology is scalable, and compatible with existing electronic device manufacturing processes.
Serving the sensor, energy harvesting and semiconductor markets, Paragraf has developed its own Hall-Effect Sensors for measuring magnetic fields in demanding environments. It is now partnering with electronic device makers to enable them to take advantage of the unique properties of graphene.
Based near Cambridge, U.K., Paragraf was a spin-out from the Department of Materials Science at Cambridge University. At our custom R&D and production facility we produce the highest-quality large-area graphene, and develop step-change graphene-based technologies utilising our expertise in:
thin film materials production
solid state structure and device processing
novel material product application
Working in partnership with others, we are using our materials in the development of devices and processes driving revolutionary technological advances in commercial applications.
