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Location

Suzhou Nanowin Science And Technology

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About Company

t is founded in Suzhou Industry Park, China in 2007, is a high-tech company devoting to developing technologies to fabricate high-quality nitride semiconductor materials. NANOWIN’s key advantage is our wealth of materials growth experience in GaN single crystal growth, owning essential patents in GaN substrates growth technologies. NANOWIN offers standard and customized free-standing GaN substrates with extra low dislocation densities and thick

t is founded in Suzhou Industry Park, China in 2007, is a high-tech company devoting to developing technologies to fabricate high-quality nitride semiconductor materials. NANOWIN’s key advantage is our wealth of materials growth experience in GaN single crystal growth, owning essential patents in GaN substrates growth technologies. NANOWIN offers standard and customized free-standing GaN substrates with extra low dislocation densities and thick AlN/Sapphire templates, which are suitable for applications in high-power LED, blue LD, high power and high frequency devices and UV LED. Our mission is to bring our key values to the related industries, such as full color display, semiconductor lighting, communication, renewable energy, and be a pioneer in the industry fabrication of nitride semiconductors.

Products

2” Free-Standing GaN Substrates

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2” Free-Standing GaN Substrates

Application :

LED display

Analytical Reports