Suntech Ultra V module

Suntech Ultra V module adopts 182 mm silicon wafer, increases the wafer size, optimizes the layout profoundly and decreases the invalid power generation area.

high-density cell interconnect technology on Ultra V module, which can shorten distance between the cells and decrease the invalid power generation area greatly and improves the energy density of the module.

The use of flexible special welding strip can mostly assure the reliability of the welding process between the cells, to improve the yield of the product effectively.

Suntech has particularly optimized structure design and own the exclusive patent. The module weighs 29.1 KG, 11% lower than the products of the same specification.

The bifacial module adopts 2.0 mm thickness glass on the front and back side, and the mechanical load capacity has increased greatly. When applying +5400/2400 Pa, the maximum structure stress of the module is 23% lower than the conventional structure design. The maximum deformation is 37% lower than the conventional structure, which can effectively decrease any risks.  This combined with a  transparent backsheet, which not only has high light transmittance and excellent PID resistance, but also reduces 11% of weight compared with double-glass bifacial modules.

Suntech Ultra V module adopts multi-busbar technology. More busbars of the cell decrease the current transverse propagation path by 50%, effectively reduce the internal loss, and improve the module power.

The half-cut cell design can decrease the power loss by the shadow effectively. The optimized circuit design not only realizes the maximum power output but also assures the reliability of the modules.

The large format Ultra V products decrease the non-silicon cost during the production, so increase the profit of each production sector. Ultra V products also decrease the system cost/watt during the power station building and bring extra profit for modules, finally the customers get more profit by it.