|Applied Nanolayers BV|
GrapheneC Graphene CAS Number : 7782-42-5
Large domain & low defect density monolayer graphene and hexagonal boron nitride from 50mm(2”) up to 200mm(8”).
Foundry-lite integration to Back End Of Line (BEOL) for typical integrations to standard Silicon, GaAs, InP or hybrid and non-conventional substrates on request.
Monolayer 2D materials with low defects and large domain size achieved with our advanced production process to grow our graphene sheets with large domain sizes with a low defect density on wafer sizes up to 200mm (8”).
CVD growth of graphene is the only technique that can compete with exfoliation when it comes to the electronic properties of graphene. In addition, CVD scales to industrial high volume wafer-scale series production, where the quality of each graphene sheet can be continuously controlled. Our wafer scale cold film transfer of 2-dimensional materials including graphene & hexagonal boron nitride (h-BN) enables integration with existing substrates such as Si, GaAs and InP.