|Samsung Electronics Co., Ltd.|
Electronics Memories Product Number : M386A4G40DM1Ram (Random Access Memory)
Production Status: Mass Production Density: 32Gb Organization: 4Gx72 Voltage: 1.2V Speed: RC Power: C Bank & Interface: 16B/POD
Samsung DDR4 LRDIMM (load reduced memory module) technology uses a distributed buffer approach to accomplish memory bandwidth efficiencies when scaling to higher capacities and speed on the upcoming DDR4 enterprise server systems, as compared to DDR4 RDIMM (registered memory modules). LRDIMM, in general, have continued to evolve and improved their value to system users, and DDR4 LRDIMM is expected to launch memory subsystem performance to a new paradigm. DDR4 LRDIMM not only appeals to the highest capacities, but also to a much wider range of applications that require highest bandwidth and/or highest capacities. In addition to LRDIMM’s features, Samsung DDR4 memory is available as LRDIMM that it provides an optimized solution for highly virtualized environments, high-performance computing and networking. Semiconductor modules of Samsung DDR4 are designed with new system circuit architecture to deliver higher performance with low power requirements than previously available memory products. Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improves performance and optimizes the total cost of ownership.