|Samsung Electronics Co., Ltd.|
Electronics Memories Product Number : K4B8G1646DRam (Random Access Memory)
Density: 8Gb Organization: 512Mx16 Speed: K0, MA, NB Package: 96FBGA
The DDR3 SDRAM is a high-speed CMOS, dynamic random-access memory internally configured as a eight-bank DRAM. The DDR3 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operation to the DDR3 SDRAM are burst oriented, start at a selected location, and continue for a burst length of four or eight in a programmed sequence. Operation begins with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be accessed (BA0-BA2 select the bank; A0-A15 select the row). The address bits registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10/AP), and the select BC4 or BL8 mode ’on the fly’ (via A12) if enabled in the mode register. Prior to normal operation, the DDR3 SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions and device operation.