|Suzhou Sicreat Nanotech Co|
Others Other productsPolished wafer
Most commonly used in MEMS and advanced CMOS integrated circuit fabrication, SOI wafers provide a manufacturing solution which helps reduce power and heat while increasing the speed performance of a device. SOI wafers are a three layer material stack composed of the following: Active layer of prime quality silicon (DEVICE LAYER) over a buried layer(BOX) of electrically insulating silicon dioxide, over a bulk silicon support wafer (HANDLE). SOI wafers are unique products which are custom built for specific end-user applications. SICREAT offers two types of SOI: Thick Film and Thin Film.
Specifications:Thick Film Thin FilmMaterial: Silicon Material: SiliconWafer Diameter: 76.2mm (3”) to 200mm (8”) Wafer Diameter: 150mm (6”), 200mm (8”)Type/Dopant: N or P Type/Dopant: N or PDevice Layer Thickness: >1.5um Device Layer: >20nm (0.02um)
Cz and Fz grown silicon SOI Single side polish and double side polish Prototype and production volumes Consistent, reliable production supply line Competitive pricing Excess inventory