|Everspin Technologies Inc.|
Electronics Memories Product Number : MR2A08ARam (Random Access Memory)
No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface, up to 50 MHz clock rate with MR20H40. • 3.0 to 3.6 Volt power supply range • Low-current sleep mode • Industrial (-40 to 85°C), Extended (-40 to 105°C), and AEC-Q100 Grade 1 (-40 to 125°C) temperature range options. • Available in 8-pin DFN or 8-pin DFN Small Flag, RoHS-compliant packages. • Direct replacement for serial EEPROM, Flash, and FeRAM • MSL Level 3
Everspin 4Mb Parallel Interface MRAM is SRAM compatible with 35 ns read/write timing and unlimited endurance. Data are always non-volatile for greater than 20 years. Data are automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. To simplify fault tolerant design, the MR4A16B includes internal single bit error correction code with 7 ECC parity bits for every 64 data bits.