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USA USA

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  • Electronics ‎6
    • Memories ‎6

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Location

Everspin Technologies Inc.

  • 6Product
  • 1Types
  • 1Industry

About Company

Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-Torque MRAM (ST-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 50 Million MRAM and ST-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and

Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-Torque MRAM (ST-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 50 Million MRAM and ST-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world.

Products

MR25H128A - 128Kb Serial SPI Interface MRAM

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

MR25H128A - 128Kb Serial SPI Interface MRAM

Properties :

Unlimited write endurance,Data retention greater than 20 years,Block write protection,Low current sleep mode,Moisture Sensitivity MSL-3
256Kb Serial SPI Interface MRAM

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

256Kb Serial SPI Interface MRAM

Properties :

Unlimited write endurance,Data retention greater than 20 years,Block write protection,Low current sleep mode,Fast 35 ns read,Native non-volatility
1Mb Parallel Interface MRAM

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

1Mb Parallel Interface MRAM

Properties :

Data retention greater than 20 years,Fast 35 ns read,Native non-volatility
4Mb Parallel Interface MRAM

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

4Mb Parallel Interface MRAM

Properties :

Unlimited write endurance,Data retention greater than 20 years,Low current sleep mode,Fast 35 ns read
16Mb Parallel Interface MRAM

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

16Mb Parallel Interface MRAM

Properties :

Unlimited write endurance,Fast 35 ns read,SRAM compatible timing

Analytical Reports