| Suzhou Nanowin Science and Technology |
Others Other products
Polished wafer
Model ItemGaN-FS-NGaN-FS-SIDimensions DimensionsF 50.8mm ± 1mmThickness Thickness300 ± 25 µmEffective area Useable Surface AreaLD Level> 90%LED Level> 78%Crystal orientation OrientationC-axis(0001) ± 0.5°Primary Orientation Flat Orientation Flat(1-100) ± 0.5 °, 16.0 ± 1.0mmTime positioning edge Secondary Orientation Flat(11-20) ± 3 °, 8.0 ± 1.0mmTTV(Total Thickness Variation)≤15 µmCurvature BOW≤20 µmConductivity type Conduction TypeN-typeSemi-InsulatingResistivity Resistivity (300K)<0.5 h · cm> 10 6 O · cmDislocation density Dislocation DensityLess than 5x106 cm-2Polishing PolishingFront Surface: Ra < 0.2nm. Epi-ready polishedBack Surface: Fine groundPackaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.
