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Applications16

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137 Result

ELECTRONICS - MEMORIES   |  MEMORY

Memory Interface

China Suzhou Montage Technology

Application : Data Storage

ELECTRONICS - MEMORIES   |  MEMORY

Digital STB

China Suzhou Montage Technology

Application : Data Storage

ELECTRONICS - MEMORIES   |  MEMORY

Solid state memory

China Suzhou Fashion Nano-Technology

Application : Data Storage

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

CNT Nantero’s NRAM® (RAM Base CNT)

USA Nantero, Inc.

Properties : Electrical Conductivity,Thermal stability,Low Volatile Organic Compounds (VOCs)

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

64Mb DRAM Compatible MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Native non-volatility,SDRAM compatible

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

16Mb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Fast 35 ns read,SRAM compatible timing

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

16Mb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Fast 35 ns read,SRAM compatible timing

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

4Mb Serial SPI Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Low current sleep mode,Fast 35 ns read

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

4Mb Serial SPI Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Low current sleep mode,Fast 35 ns read

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

4Mb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Low current sleep mode,Fast 35 ns read

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

4Mb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Low current sleep mode,Fast 35 ns read

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

1Mb Quad Serial SPI Interface

USA Everspin Technologies Inc.

Properties : Data retention greater than 20 years,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

1Mb Serial SPI Interface

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Block write protection,Fast 35 ns read,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

1Mb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Data retention greater than 20 years,Fast 35 ns read,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

1Mb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Data retention greater than 20 years,Fast 35 ns read,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

1Mb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Data retention greater than 20 years,Fast 35 ns read,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

1Mb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Data retention greater than 20 years,Fast 35 ns read,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

256Kb Serial SPI Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Block write protection,Low current sleep mode,Fast 35 ns read,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

256Kb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Data retention greater than 20 years,Fast 35 ns read,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

256Kb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Data retention greater than 20 years,Fast 35 ns read,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

256Kb Parallel Interface MRAM

USA Everspin Technologies Inc.

Properties : Data retention greater than 20 years,Fast 35 ns read,Native non-volatility

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

MR25H128A - 128Kb Serial SPI Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Block write protection,Low current sleep mode,Moisture Sensitivity MSL-3

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

MR25H128A - 128Kb Serial SPI Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Block write protection,Low current sleep mode,Moisture Sensitivity MSL-3

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

MR25H128A - 128Kb Serial SPI Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Block write protection,Low current sleep mode,Moisture Sensitivity MSL-3

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

MR25H128A - 128Kb Serial SPI Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Block write protection,Low current sleep mode,Moisture Sensitivity MSL-3

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

MR25H128A - 128Kb Serial SPI Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Block write protection,Low current sleep mode,Moisture Sensitivity MSL-3

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

MR25H128A - 128Kb Serial SPI Interface MRAM

USA Everspin Technologies Inc.

Properties : Unlimited write endurance,Data retention greater than 20 years,Block write protection,Low current sleep mode,Moisture Sensitivity MSL-3

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Server DRAM

South Korea Samsung Electronics Co., Ltd.

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Consumer DRAM

South Korea Samsung Electronics Co., Ltd.

Properties : Density: 8Gb,Package: 96FBGA,Organization: 512Mx16,Speed: K0, MA

Application : Gaming Console,Digital Still/Video Cameras,Set Top Box,Smart TV

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Consumer DRAM

South Korea Samsung Electronics Co., Ltd.

Properties : Density: 8Gb,Package: 96FBGA,Speed: K0, MA, NB,Organization: 512Mx16

Application : Gaming Console,Digital Still/Video Cameras,Set Top Box,Smart TV

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Consumer DRAM

South Korea Samsung Electronics Co., Ltd.

Properties : Package: 78FBGA,Density: 8Gb,Organization: 1Gx8,Speed: K0, MA, NB

Application : Gaming Console,Digital Still/Video Cameras,Set Top Box,Smart TV

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Consumer DRAM

South Korea Samsung Electronics Co., Ltd.

Properties : Density: 4Gb,Package: 96FBGA,Organization: 256Mx16,Speed: K0, MA, NB

Application : Gaming Console,Digital Still/Video Cameras,Set Top Box,Smart TV

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Consumer DRAM

South Korea Samsung Electronics Co., Ltd.

Properties : Density: 4Gb,Package: 96FBGA,Organization: 256Mx16,Speed: H9, K0, MA, NB

Application : Gaming Console,Digital Still/Video Cameras,Set Top Box,Smart TV

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Consumer DRAM

South Korea Samsung Electronics Co., Ltd.

Properties : Density: 4Gb,Package: 78FBGA,Organization: 512Mx8,Speed: K0, MA, NB

Application : Gaming Console,Digital Still/Video Cameras,Set Top Box,Smart TV

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Consumer DRAM

South Korea Samsung Electronics Co., Ltd.

Properties : Density: 4Gb,Package: 78FBGA,Organization: 512Mx8,Speed: H9, K0, MA, NB

Application : Gaming Console,Digital Still/Video Cameras,Set Top Box,Smart TV

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Consumer DRAM

South Korea Samsung Electronics Co., Ltd.

Properties : Density: 2Gb,Organization: 128Mx16,Package: 96FBGA,Speed: H9, K0, MA, NB

Application : Gaming Console,Digital Still/Video Cameras,Set Top Box,Smart TV

ELECTRONICS - MEMORIES   |  RAM (RANDOM ACCESS MEMORY)

Consumer DRAM

South Korea Samsung Electronics Co., Ltd.

Properties : Package: 78FBGA,Density: 2Gb,Organization: 128Mx16,Speed: K0, MA, NB

Application : Gaming Console,Digital Still/Video Cameras,Set Top Box,Smart TV