ELECTRONICS - MEMORIES | RAM (RANDOM ACCESS MEMORY)
Server DRAM
Properties :
Production Status: Mass Production,Density: 4Gb,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Package: 78FBGA,Organization: 512Mx8Application :
High performance computing and networking
ELECTRONICS - MEMORIES | RAM (RANDOM ACCESS MEMORY)
Server DRAM
Properties :
Production Status: Mass Production,Density: 4Gb,Organization: 1Gx4,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Package: 78FBGAApplication :
High performance computing and networking
ELECTRONICS - MEMORIES | RAM (RANDOM ACCESS MEMORY)
Server DRAM
Properties :
Production Status: Mass Production,Density: 4Gb,Organization: 1Gx4,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Package: 78FBGAApplication :
High performance computing and networking
ELECTRONICS - MEMORIES | RAM (RANDOM ACCESS MEMORY)
Server DRAM
Properties :
Production Status: Mass Production,Density: 4Gb,Organization: 1Gx4,Voltage: 1.2V,Speed: PB, RC,Power: C,Bank & Interface: 16B/POD,Package: 78FBGAApplication :
High performance computing and networking
ELECTRONICS - SENSOR | SENSOR
TitanXT
Properties :
Thermal stability,Digital,Ultra-low Self-noise,TriaxialApplication :
Structural monitoring
ELECTRONICS - SENSOR | SENSOR
Titan Posthole
Properties :
Thermal stability,Digital,Ultra-low Self-noise,TriaxialApplication :
Structural monitoring
ELECTRONICS - SENSOR | SENSOR
TitanSMA
Properties :
Thermal stability,Digital,Ultra-low Self-noise,TriaxialApplication :
Structural monitoring
ELECTRONICS - SENSOR | SENSOR
TitanEA
Properties :
Thermal stability,Digital,Ultra-low Self-noise,TriaxialApplication :
Bridges,Building,Structural monitoring,Networked deployments,Hydro-electric dams
ELECTRONICS - SENSOR | SENSOR
Titan Strong Motion Accelerometer
Properties :
Thermal stability,Digital,Ultra-low Self-noise,TriaxialApplication :
Structural monitoring
ELECTRONICS - SENSOR | SENSOR
SUN SENSOR on a CHIP Technology
Properties :
DigitalApplication :
Aerospace,Satellites,Aeronautics
ELECTRONICS - SENSOR | SENSOR
SUN SENSOR on a CHIP Technology
Properties :
AnalogApplication :
Aerospace,Satellites,Aeronautics
ELECTRONICS - SENSOR | SENSOR
SUN SENSOR on a CHIP Technology
Properties :
DigitalApplication :
Aerospace,Satellites,Aeronautics
ELECTRONICS - SENSOR | SENSOR
SUN SENSOR on a CHIP Technology
Properties :
AnalogApplication :
Aerospace,Satellites,Aeronautics
ELECTRONICS - PROCESSOR | PROCESSOR
Fujitsu cpu
Properties :
Low power consumption,High performance,High reliability,20 nanometer process technology,Cores: 32
ELECTRONICS - PROCESSOR | PROCESSOR
Fujitsu cpu
Properties :
Low power consumption,High performance,High reliability,40 nanometer process technology
ELECTRONICS - PROCESSOR | PROCESSOR
Fujitsu cpu
Properties :
Low power consumption,High performance,High reliability,Lithography 45 nmApplication :
K computer
ELECTRONICS - PROCESSOR | PROCESSOR
Fujitsu cpu
Properties :
High performance,Using multi-core and multi-thread per core technology,4 cores per CPU chipApplication :
Large-scale transaction processing
ELECTRONICS - PROCESSOR | PROCESSOR
Fujitsu cpu
Properties :
High performance,Using multi-core and multi-thread per core technology,4 cores per CPU chipApplication :
Large-scale transaction processing
ELECTRONICS - PROCESSOR | PROCESSOR
Fujitsu cpu
Properties :
High performance,2 cores per CPU chip,Using multi-core and multi-thread per core technologyApplication :
Large-scale transaction processing
ELECTRONICS - PROCESSOR | PROCESSOR
IBM cpu
Properties :
90 nm process technology,Cores: 3,L1 cache (32kB/32kB), L2 Cache (1024kB)Application :
Gaming Console
ELECTRONICS - PROCESSOR | PROCESSOR
IBM cpu
Properties :
Low power consumption,Power Saving,Power-tuningApplication :
Portable computer
ELECTRONICS - PROCESSOR | PROCESSOR
IBM cpu
Properties :
Low power consumption,Power Saving,Power-tuningApplication :
Portable computer
ELECTRONICS - PROCESSOR | PROCESSOR
IBM cpu
Properties :
Low power consumption,Power Saving,Power-tuning
ELECTRONICS - SENSOR | SENSOR
NanoScan 2s
Properties :
USB Connectivity,Measure Pulsed and CW Lasers,Pulse Rate Measurement,Mechanical Linear Stage Control,Low Power Scanning Slit Profiler,Pyroelectric DetectorApplication :
LasersELECTRONICS - SENSOR | SENSOR
NanoScan 2s
Properties :
USB Connectivity,Measure Pulsed and CW Lasers,Pulse Rate Measurement,Mechanical Linear Stage Control,Scanning Slit Profiler,Pyroelectric DetectorApplication :
LasersELECTRONICS - SENSOR | SENSOR
NanoScan 2s
Properties :
USB Connectivity,Measure Pulsed and CW Lasers,Pulse Rate Measurement,Mechanical Linear Stage Control,Low Power Scanning Slit Profiler,Germanium DetectorApplication :
Visible lasers,NIR lasersELECTRONICS - SENSOR | SENSOR
NanoScan 2s
Properties :
USB Connectivity,Measure Pulsed and CW Lasers,Pulse Rate Measurement,Mechanical Linear Stage Control,Germanium Detector,Scanning Slit ProfilerApplication :
NIR lasers,IR lasersELECTRONICS - SENSOR | SENSOR
NanoScan 2s
Properties :
USB Connectivity,Measure Pulsed and CW Lasers,Pulse Rate Measurement,Mechanical Linear Stage Control,Small Beam Scanning Slit Profiler,Germanium DetectorApplication :
UV lasers,Visible lasers,NIR lasersELECTRONICS - SENSOR | SENSOR
NanoScan 2s
Properties :
USB Connectivity,Measure Pulsed and CW Lasers,Pulse Rate Measurement,Mechanical Linear Stage Control,Low Power Scanning Slit Profiler,Silicon DetectorApplication :
UV lasers,Visible lasers,NIR lasersELECTRONICS - SENSOR | SENSOR
NanoScan 2s
Properties :
USB Connectivity,Measure Pulsed and CW Lasers,Pulse Rate Measurement,Mechanical Linear Stage ControlApplication :
UV lasers,Visible lasers,NIR lasersELECTRONICS - SENSOR | SENSOR
NanoScan 2s
Properties :
USB Connectivity,Measure Pulsed and CW Lasers,Pulse Rate Measurement,Mechanical Linear Stage ControlApplication :
UV lasers,Visible lasers,NIR lasers
RENEWABLE ENERGIES - BATTERIES | BATTERY
Battery
Properties :
350Wh/Kg usable specific energy at C/10 rate,840Wh/L usable energy density (without terrace) at C/10 rate,Excellent high voltage (4.47V) stability,Proprietary Si-based anode and Cobalt-rich composite (CRC) cathode,Low costApplication :
Unmanned aerial vehicles (UAVs),Flying automobiles,Military applications,Grid applications
RENEWABLE ENERGIES - BATTERIES | BATTERY
Battery
Properties :
Non-toxic,Low cost,Flexibility of applications,Ability to construct large cells,RecyclabilityApplication :
Energy sector,Car industry
ELECTRONICS - SENSOR | SENSOR
INFRARED SENSORS
Application :
OEM applications,Soap dispensers,Faucets
ELECTRONICS - SENSOR | SENSOR
Nanopower 5V CMOS op-amp
Properties :
Rail-to-rail Inputs,Fast Desaturation,Accurate Signal Conditioning of High Impedance SensorsApplication :
Gas sensor,Medicine,Power metering,UV and photo sensors,Electrochemical sensors,Pyroelectric passive infrared (PIR) detection,Battery current sensing,RFID readersELECTRONICS - SENSOR | SENSOR
Nanopower 5V CMOS op-amp
Properties :
Rail-to-rail Inputs,Fast Desaturation,Accurate Signal Conditioning of High Impedance SensorsApplication :
Gas sensor,Medicine,Power metering,UV and photo sensors,Electrochemical sensors,Pyroelectric passive infrared (PIR) detection,Battery current sensing,RFID readers
ELECTRONICS - SENSOR | SENSOR
Nanopower 5V CMOS op-amp
Properties :
Rail-to-rail Inputs,Fast Desaturation,Accurate Signal Conditioning of High Impedance Sensors,Tolerance to Power Supply Transient DropsApplication :
Gas sensor,Medicine,Power metering,UV and photo sensors,Electrochemical sensors,Pyroelectric passive infrared (PIR) detection,Battery current sensing,RFID readers
ELECTRONICS - SENSOR | SENSOR
Rail-to-rail 1.1 V quad nanopower comparators
Properties :
Power Saving,Rail-to-rail InputsApplication :
Signal conditioning,Portable systems
ELECTRONICS - SENSOR | SENSOR
Rail-to-rail 1.1 V dual nanopower comparators
Properties :
Power Saving,Rail-to-rail InputsApplication :
Medicine,Signal conditioning,Portable systems
ELECTRONICS - SENSOR | SENSOR
Rail-to-rail 0.9V nanopower single comparator
Properties :
Power Saving,Rail-to-rail Inputs
ELECTRONICS - SENSOR | SENSOR
SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V short-circuit rugged IGBTs
Properties :
Advanced Current Sensing,Smart Shutdown Function,Interlocking Function,Internal Bootstrap Diode,Undervoltage Lockout,Optimized for Low Electromagnetic Interference,Comparator for Fault Protection against Overcurrent,Short-circuit Rugged TFS IGBTs
ELECTRONICS - SENSOR | SENSOR
SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V short-circuit rugged IGBTs
Properties :
Advanced Current Sensing,Smart Shutdown Function,Interlocking Function,Internal Bootstrap Diode,Undervoltage Lockout,Optimized for Low Electromagnetic Interference,Comparator for Fault Protection against Overcurrent,Short-circuit Rugged TFS IGBTs
ELECTRONICS - SENSOR | SENSOR
SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V short-circuit rugged IGBTs
Properties :
Advanced Current Sensing,Smart Shutdown Function,Interlocking Function,Internal Bootstrap Diode,Undervoltage Lockout,Optimized for Low Electromagnetic Interference,Comparator for Fault Protection against Overcurrent,Short-circuit Rugged TFS IGBTs
ELECTRONICS - SENSOR | SENSOR
SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V short-circuit rugged IGBTs
Properties :
Advanced Current Sensing,Interlocking Function,Internal Bootstrap Diode,Undervoltage Lockout,Optimized for Low Electromagnetic Interference,Comparator for Fault Protection against Overcurrent,Short-circuit Rugged TFS IGBTs
ELECTRONICS - SENSOR | SENSOR
SLLIMM nano 2nd series IPM, 3 A, 600 V, 3-phase IGBT inverter bridge
Properties :
Power Saving,Smart Shutdown Function,Interlocking Function,Internal Bootstrap Diode,Undervoltage Lockout,Optimized for Low Electromagnetic Interference,Comparator for Fault Protection against Overcurrent
ELECTRONICS - SENSOR | SENSOR
SLLIMM nano 2nd series IPM, 3 A, 600 V, 3-phase IGBT inverter bridge
Properties :
Smart Shutdown Function,Interlocking Function,Internal Bootstrap Diode,Undervoltage Lockout,Optimized for Low Electromagnetic Interference,Comparator for Fault Protection against Overcurrent
ELECTRONICS - SENSOR | SENSOR
SLLIMM-nano small low-loss intelligent molded module IPM, 3 A, 600 V 3-phase IGBT inverter bridge
Properties :
Advanced Current Sensing,Power Saving,Smart Shutdown Function,Interlocking Function,Internal Bootstrap Diode,Undervoltage Lockout,Optimized for Low Electromagnetic Interference,Optimized Pinout for Easy Board Layout
ELECTRONICS - SENSOR | SENSOR
SLLIMM-nano small low-loss intelligent molded module IPM, 3 A, 600 V 3-phase IGBT inverter bridge
Properties :
Advanced Current Sensing,Power Saving,Smart Shutdown Function,Interlocking Function,Internal Bootstrap Diode,Undervoltage Lockout,Optimized Pinout for Easy Board Layout
ELECTRONICS - SENSOR | SENSOR
SLLIMM-nano small low-loss intelligent molded module IPM, 3 A, 600 V 3-phase IGBT inverter bridge
Properties :
Power Saving,Interlocking Function,Internal Bootstrap Diode,Undervoltage Lockout,Optimized for Low Electromagnetic Interference,Optimized Pinout for Easy Board Layout
